秧苗状Zn_2SnO_4纳米线的制备及光致发光性能研究  

Synthesis and Photoluminescence of Seedling-Like Zn_2SnO_4 Nanowires

作　　者：刘中奎[1] 

机构地区：[1]临沂大学分析测试实验中心,临沂276000

出　　处：《光散射学报》2011年第3期234-237,共4页The Journal of Light Scattering

基　　金：山东省自然科学基金(2005ZRB01602)

摘　　要：本文通过化学气相沉积方法成功制备了秧苗状Zn2SnO4纳米线,X射线衍射表明,样品为面心立方结构的Zn2SnO4,同时含有少量的ZnO物相,并且可以通过延长沉积时间的方法获得较为纯净的Zn2SnO4材料。SEM结果显示样品形貌为秧苗状的纳米线。通过样品的光致发光谱的研究发现,Zn2SnO4的紫外发光强度随着ZnO杂相的减少逐渐增强。Seedling-like Zn2SnO4 nanowires are synthesized by chemical vapor deposition method.The structure and morphology of the as-grown products are characterized by X-ray diffraction（XRD）,Raman spectroscopy,and scanning electron microscopy（SEM）.Results show that all the samples are face-centered cube（fcc） phase.A small quantity of ZnO is also found in the sample.The purity of Zn2SnO4 can be increased by prolonging the deposition time.Room temperature photoluminescence（PL） spectrum shows that luminescent intensity of the ultraviolet region（320-450 nm）increases as the amount of impurities decreases.

关 键 词：Zn2SnO4 光致发光 拉曼光谱 CVD 

分 类 号：O611.3[理学—无机化学]