用于无线互连的片上天线金属干扰分析与设计规则  

Metal interference analysis and design rules of on-chip antennas for wireless interconnection

作　　者：何小威[1] 张民选[1] 李晋文[1] 

机构地区：[1]国防科技大学计算机学院微电子与微处理器研究所,湖南长沙410073

出　　处：《红外与毫米波学报》2011年第5期475-480,共6页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金(61076025)

摘　　要：定性分析了金属互连线、电源网格、散热与封装以及金属Dummy Fills对2 mm长、30μm宽的片上偶极天线对工作特性的影响.通过在硅衬底和散热金属之间引入0.35 mm厚的金刚石介质材料使天线的传输增益在20 GHz时提高了9 dB.为研究这些金属结构和布局对集成偶极天线对的传输增益、相位、阻抗及辐射特性带来的干扰,使用三维电磁场软件HFSS进行了全面模拟,根据实验结果与分析借助数值拟合的方法得出了天线对增益大小及相位在金属干扰环境下的若干线性经验公式,总结了一套面向无线互连的片上天线设计规则.The impacts of on-chip metal connective lines,power grids,heat sink along with packaging,and dummy fills on a 2 mm-long,30 μm-wide on-chip dipole antenna pair characteristics were investigated with qualitative analysis.On-chip antenna pair transmission gain has been improved by 9 dB at 20 GHz by employing a 0.35 mm thick diamond layer between silicon substrate and heat sink.Extensive simulations were performed by three-dimensional software HFSS to explore the interfering effects of these metal structures and placements on the transmission gain,phase,impedance and radiation pattern for integrated dipole antenna pair.According to the results of experiment and simulations,several empirical linear formulas for antenna pair gain and phase in interfering circumstances were obtained using numerical fit.A set of design rules for on-chip antenna was summarized for wireless interconnection.

关 键 词：片上天线 无线互连 数值拟合 传输增益 

分 类 号：TN4[电子电信—微电子学与固体电子学]