Advancements in organic nonvolatile memory devices  

作　　者：LIU Xin JI ZhuoYu LIU Ming SHANG LiWei LI DongMei DAI YueHua 

机构地区：[1]Laboratory of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China [2]School of Electronic and Information Engineering, Anhui University, Hefei 230039, China

出　　处：《Chinese Science Bulletin》2011年第30期3178-3190,共13页

基　　金：supported by the National Basic Research Program of China (2011CB808404, 2009CB939703);the National Natural Science Foundation of China (60825403, 90607022, and 61001043)

摘　　要：As one of the most promising candidates for next generation storage media, organic memory devices have aroused worldwide research interest in both academia and industry. In recent years, organic memories have experienced rapid progress. We review the development of organic resistive switching memories in terms of structure, characteristics, materials used, and integration. Some basic concepts are discussed, as well as the obstacles hindering the development and possible commercialization of organic memory devices.As one of the most promising candidates for next generation storage media, organic memory devices have aroused woddwide research interest in both academia and industry. In recent years, organic memories have experienced rapid progress. We review the development of organic resistive switching memories in terms of structure, characteristics, materials used, and integration. Some basic concepts are discussed, as well as the obstacles hindering the development and possible commercialization of organic memory devices.

关 键 词：非易失性存储器 设备 存储介质 记忆体 候选人 工业界 学术界 商品化 

分 类 号：TP333[自动化与计算机技术—计算机系统结构] TB852.1[自动化与计算机技术—计算机科学与技术]