多孔石英基体上CVD法沉积氮化硅涂层的工艺、结构与性能研究  

Synthetic Techniques,Structures and Properties of Silicon Nitride Coatings Prepared by CVD on Porous Silicon Oxide Ceramics

作　　者：李家亮[1] 牛金叶[1] 

机构地区：[1]山东理工大学化学工程学院,淄博255049

出　　处：《硅酸盐通报》2011年第5期1197-1202,1207,共7页Bulletin of the Chinese Ceramic Society

摘　　要：以甲硅烷(20%甲硅烷+80%氢气)和氨气作为反应前驱体,选择孔隙率为20%左右的多孔石英陶瓷基体,采用CVD法在多孔石英基体表面制备了氮化硅涂层。研究了沉积反应温度、反应压力、反应气体配比以及沉积时间等工艺参数对附着力的影响,确定了CVD法制备氮化硅涂层的最佳工艺参数,通过对所得涂层及复合材料进行抗弯强度和介电性能的表征,探讨了氮化硅涂层对多孔石英基体力学性能和介电性能的影响。The SiH4/NH3 system was selected as precursors and the porous silicon oxide ceramic with porosity of 20% was used as substrate.Chemical vapor deposition（CVD） process was employed to deposit silicon nitride coatings on the surface of porous silicon oxide ceramics.The effect of coating parameters on the adhesive force between coatings and the porous substrate was investigated combined with the structures and properties of porous silicon oxide ceramics substrate.The influence of depositing temperature,working pressure,SiH4/NH3 ratio and depositing process time on the adhesive force was discussed to obtain the optimal technological conditions.Characterization of the bending strength and dielectric properties was carried out to investigate the effect of silicon nitride coatings on the porous ceramic substrate.

关 键 词：CVD 多孔石英陶瓷 氮化硅涂层 

分 类 号：O484.1[理学—固体物理]