3ω方法测量各向异性SiC晶体的导热系数  

Determination of Thermal Conductivity of Anisotropic SiC Crystal Using 3ωMethod

作　　者：苏国萍[1,2,3] 唐大伟[1] 郑兴华[1,2] 邱琳[1,2] 杜景龙[1,2] 

机构地区：[1]中国科学院工程热物理研究所,北京100190 [2]中国科学院研究生院,北京100049 [3]燕山大学车辆与能源学院,河北秦皇岛066004

出　　处：《工程热物理学报》2011年第11期1885-1888,共4页Journal of Engineering Thermophysics

基　　金：国家自然科学基金资助项目(No.50876103)

摘　　要：碳化硅晶体具有很高的导热系数,能够在高温下操作,作为有希望用于微电子机械系统的材料,引起了人们的广泛关注。本文使用3ω方法测量了各向异性材料碳化硅晶体三个不同方向的导热系数。在碳化硅晶体样品的表面布置三个位置不同,一定尺度和形状的微型Au金属探测器。每个微型Au金属探测器的温度波动情况包含样品不同方向的热信号。根据谐波法测量原理和各向异性材料碳化硅晶体的导热特性,可得到碳化硅晶体样品x,y和z方向的导热系数。使用所设计的微型金属探测器结构,首次可同时获得各向异性材料三个方向的导热系数。Due to the high thermal conductivity, ability to operate at high temperature, there has been a tremendous amount of interest in silicon carbide, which is considered as an attractive candidate material for MEMS applications. Thermal conductivities in three different directions of anisotropic silicon carbide （SIC） crystal are determinate using a 3ω method. Three Au micro-metal probers with a given size and shape are deposited on the surface of SiC crystal along different directions. The temperature fluctuation in every micro-metal prober imply thermal signal in specimen with different direction. According to measuring principle of 3w method and thermal characteristic in the anisotropic SiC crystal, thermal conductivities in x, y and z direction of SiC crystal can be acquired. The results indicate that thermal conductivities in three different directions of anisotropic materials can be characterized using the micro-metal prober construction we designed.

关 键 词：SIC晶体 3ω方法 各向异性 导热系数 

分 类 号：TK124[动力工程及工程热物理—工程热物理]