太阳电池用单晶Si表面的织构化研究  

Study on Surface Texturization of Monocrystalline Silicon for Solar Cells

作　　者：吕红杰[1] 沈鸿烈[1] 沈洲[1] 刘斌[1] 李斌斌[1] 

机构地区：[1]南京航空航天大学,材料科学与技术学院,南京210016

出　　处：《电子器件》2011年第5期498-502,共5页Chinese Journal of Electron Devices

基　　金：国家高技术研究发展计划(863计划)项目(2006AA03Z219);江苏高校优势学科建设工程项目

摘　　要：在碱溶液各向异性腐蚀单晶硅片制备绒面的过程中,固定反应温度和添加剂体积分数,重点研究了金字塔倾斜角α的大小与反射率间的关系,并分析了反应时间和NaOH溶液的浓度对表面织构的影响。用分光光度计测量了制备绒面的反射率,结果表明,当腐蚀时间为40 min,NaOH质量分数为2.5%时,在400 nm～1 100 nm波长范围内,绒面平均反射率最低,仅为10.54%。用扫描电镜观察了Si片表面形貌和金字塔倾斜角α,发现所得反射率最低的绒面金字塔倾斜角α为54.02°。以所得实验数据为基础,得到了反射率随金字塔倾斜角度变化的拟合曲线和函数表达式。During anisotropic etching of monocrystalline silicon,the relationship between the angle α of the pyramid and the reflectivity of etched surface was studied as well as the influence of the concentration of NaOH and the etching time on the reflectivity of the textural silicon surface by fixing the etching temperature and the additive concentration.The optimized parameters are that the alkaline solution concentration is 2.5% and the etching time is 40 min,while the surface reflectivity in the range of 400 nm and 1 100 nm is only 10.54% according to the spectrophotometer measurement.The surface of the textured silicon and the angle were studied by the scanning electron microscopy,and the results show that the angle α is about 54.02° in the optimum condition.On the basis of experimental data,the simulate curve and the simulate equation of the reflectivity as a function of pyramid angle are obtained by software Origin.And the simulate curve fits the points of experimental data well.

关 键 词：太阳电池 单晶硅 金字塔 倾斜角α 反射率 

分 类 号：TK514[动力工程及工程热物理—热能工程]