偏压条件对光耦合器总剂量辐照效应的影响  

Effect of Bias on Total Dose Effect of Optical Couplers

作　　者：何玉娟 罗宏伟 恩云飞 

机构地区：[1]电子元器件可靠性物理及其应用技术重点实验室,广州510610

出　　处：《电子器件》2011年第5期511-513,共3页Chinese Journal of Electron Devices

基　　金：国家微电子预研项目(51308040403)

摘　　要：通过对不同偏压条件对光耦合器总剂量辐照效应的影响进行研究,结果发现随着总剂量的增加,光耦合器电流转换率CTR会降低60%～80%,且输入低电流时光耦合器总剂量辐照损伤更严重,其原因可能是输入低电流时光耦合器内部发光二极管辐照过程中更容易产生非发光陷阱所致。The total dose irradiation effect of optical couplers with different bias was studied.It was indicated that the current transfer rate（CTR）was decreased about 60% to 80% when irradiation total dose increased and the worst bias was the bias with lower input current（IF）.This was probably related to increased non-luminescent trapped charges induced by irradiation in LED of optical couplers when IF was lower.

关 键 词：可靠性 辐照 总剂量 光耦合器 偏置条件 

分 类 号：TN306[电子电信—物理电子学]