2SC3356晶体管ESD潜在性失效判别的参数研究  

Study on Latent Failure Parameters Criterion of 2SC3356 Caused by ESD

作　　者：祁树锋[1] 曾泰[2] 张晓倩[3] 刘红兵[4] 杨洁[1] 

机构地区：[1]第二炮兵工程学院六系,西安710025 [2]空军雷达学院二系,武汉430010 [3]太原卫星发射中心,太原030000 [4]中电集团第13研究所,石家庄050051

出　　处：《青岛科技大学学报（自然科学版）》2011年第5期538-542,共5页Journal of Qingdao University of Science and Technology:Natural Science Edition

基　　金：国家自然科学基金重点项目(50237040);国家自然科学基金面上项目(60671044)

摘　　要：针对2SC3356晶体管进行了ESD潜在性失效判别的参数研究,研究的参数包括结电容和噪声系数、结反向击穿电压和结反向漏电流,以及高温反偏的方法来检验器件是否受到潜在性损伤。提出了检验双极型硅器件受到ESD潜在性损伤的最有效方法,即精确测试器件的直流参数,特别是直流放大倍数hFE及反向漏电流ICEO,是检验双极型硅器件是否受到ESD潜在性损伤的最有效方法。This paper studied the parameters which are very likely to be the latent failure of bipolar Si-device caused by ESD. The parameters included junction capacitance, noise coefficient, reverse breakdown voltage and reverse leakage current. In addition to all of the above, the high-temperature reverse method is also used to test whether the latent failure of Si-device yielding is caused by ESD. The direct current parameters of device, especially the direct current amplification hFE and anti-flow leakage current ICEO,are the most effectively and important papameters which can be used to test whether the latent failure of bipolar Si-device yielding is caused by ESD.

关 键 词：2SC3356晶体管 ESD 微电子器件 潜在性失效 

分 类 号：O441[理学—电磁学]