Design of 700 V triple RESURF nLDMOS with low on-resistance  

作　　者：银杉 乔明 张永满 张波 

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China [2]School of Electrical and Electronic Engineering,Nanyang Technological University

出　　处：《Journal of Semiconductors》2011年第11期47-50,共4页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(No.60906038);the Pre-Research Foundation,China(No. 9140A08010309DZ02);the Science-Technology Foundation for Young Scientist of University of Electronic Science and Technology of China(No.L08010301JX0830)

摘　　要：A 700 V triple RESURF nLDMOS with a low specific on-resistance of 100 mΩ.cm^2 is designed. Compared with a conventional double RESURF nLDMOS whose P-type layer is located on the surface of the drift region, the P-type layer of a triple RESURF nLDMOS is located within it. The difference between the locations of the P-type layer means that a triple RESURF nLDMOS has about a 30% lower specific on-resistance at the same given breakdown voltage of 700 V. Detailed research of the influences of various parameters on breakdown voltage, specific on-resistance, as well as process tolerance is involved. The results may provide guiding principles for the design of triple RESURF nLDMOS.A 700 V triple RESURF nLDMOS with a low specific on-resistance of 100 mΩ.cm^2 is designed. Compared with a conventional double RESURF nLDMOS whose P-type layer is located on the surface of the drift region, the P-type layer of a triple RESURF nLDMOS is located within it. The difference between the locations of the P-type layer means that a triple RESURF nLDMOS has about a 30% lower specific on-resistance at the same given breakdown voltage of 700 V. Detailed research of the influences of various parameters on breakdown voltage, specific on-resistance, as well as process tolerance is involved. The results may provide guiding principles for the design of triple RESURF nLDMOS.

关 键 词：NLDMOS triple RESURF breakdown voltage specific on-resistance charge sharing 

分 类 号：TN386[电子电信—物理电子学]