Ф400mm直拉硅单晶生长过程中氧浓度对微缺陷影响的数值模拟  

Simulation of Microdefect with Different Oxygen Concentration in Ф400 mmCZ Silicon Crystal Growth

作　　者：曾庆凯[1] 关小军[1] 潘忠奔[2] 张怀金[2] 王丽君[1] 禹宝军[1] 刘千千[1] 

机构地区：[1]山东大学材料液固结构演变与加工教育部重点实验室,济南250061 [2]山东大学晶体材料国家重点实验室,济南250100

出　　处：《人工晶体学报》2011年第5期1150-1156,共7页Journal of Synthetic Crystals

基　　金：高等学校博士学科点专项科研基金(No.200804220021)

摘　　要：针对大直径直拉硅的微缺陷控制问题,模拟研究了初始氧浓度对于直径400 mm直拉硅单晶生长过程中原生点缺陷、空洞和氧沉淀演变规律。结果表明:晶体生长过程中氧沉淀和空洞的浓度及尺寸受晶体所经历的热历史和初始氧浓度的共同影响。当温度降低时,氧沉淀和空洞浓度降低,空洞尺寸增大,氧沉淀尺寸随初始氧浓度不同变化规律相异。在较低初始氧浓度时,随温度降低氧沉淀尺寸减小,在较高氧浓度时,氧沉淀尺寸增加。在相同热条件下,高温时,随初始氧浓度增加,空洞浓度先降低后升高,随后又继续降低;低温时,空洞浓度先不变后降低。In order to control microdefect in silicon growth,grown-in defects,void and oxygen precipitation behavior with different initial oxygen concentration in Ф400 mm CZ Silicon crystal growth has been simulated.The results show that the concentration and size distribution of void and oxygen precipitation are deeply affected by the thermal history and initial oxygen concentration.As the temperature decreasing,the concentration of void and oxygen precipitation decreases,and oxygen precipitation size varies differently,exhibiting that the size reduced at low oxygen concentration and enlarged at high oxygen concentration.Under the same thermal history,with oxygen concentration increases,the concentration of void decreases at first,then increases at high temperature,and not changes at first then decreases at low temperature.

关 键 词：CZ硅 数值模拟 空洞 氧沉淀 初始氧浓度 

分 类 号：O78[理学—晶体学]