XPS研究N-Al共掺p型ZnO薄膜的传导特性  

Conduction Characteristics of N-Al Codoping p-ZnO Films by XPS

作　　者：张子才[1] 于威[2] 张坤[1] 滕晓云[2] 傅广生[2] 

机构地区：[1]河北大学工商学院,保定071002 [2]河北大学物理科学与技术学院,保定071002

出　　处：《人工晶体学报》2011年第5期1199-1202,共4页Journal of Synthetic Crystals

基　　金：河北省自然科学基金(E2006001006);2009年河北省博士后基金

摘　　要：采用螺旋波等离子体辅助射频磁控溅射技术,在α-Al2O3衬底上制备了N-Al共掺ZnO薄膜样品。Hall测量表明室温下ZnAlO:N薄膜为n型传导,在O2等离子体气氛中550℃退火后变为p型。p型ZnO薄膜的载流子浓度为2.1×1016 cm-3,霍尔迁移率为5 cm2/V.s。用X射线光电子能谱仪(XPS)对退火前后的ZnO薄膜进行了各元素的化学态分析。XPS结果表明,ZnAlO:N薄膜中存在两种与N元素有关的缺陷,N原子替代O位形成的(N)O和N分子替代O位形成的(N2)O。退火后ZnAlO:N薄膜中(N2)O缺陷减少,(N)O缺陷浓度占优导致了薄膜传导类型转变。The ZnAlO∶N films was prepared on α-Al2O3 substrates by the technique of helicon-wave-plasma assisted sputtering deposition.The as-grown ZnAlO∶N film behaved n-type conduction at room temperture,but transformed into p-type conduction after annealed at 550 ℃ in an O2 flow.The p-type ZnAlO∶N film has a hole concentration of 2.1×1016 cm-3 and a Hall mobility of 5 cm2/V·s.X-ray photoelectron spectroscopy measurment indicated that substitution of N for O site is in forms of N atom（N）O and N molecule（N2）O for the ZnAlO∶N films,and the conduction transition for the annealed ZnAlO∶N film induced by the（N2）O donors decreased and the concentration of（N）O defect becomes dominant.

关 键 词：ZNO薄膜 XPS (N)o缺陷 

分 类 号：O484[理学—固体物理]