Al和Sb共掺对ZnO有序阵列薄膜的结构和光学性能的影响  

Effects of codoping of Al and Sb on structure and optical properties of ZnO nanorod ordered array thin films

作　　者：钟文武[1] 刘发民[1] 蔡鲁刚[1] 丁芃[1] 柳学全[2] 李一[2] 

机构地区：[1]北京航空航天大学物理科学与核能工程学院,微纳测控与低维物理教育部重点实验室,北京100191 [2]钢铁研究总院,北京100081

出　　处：《物理学报》2011年第11期688-694,共7页Acta Physica Sinica

基　　金：国家高技术研究发展计划(批准号:2009AA03C116)资助的课题~~

摘　　要：采用水热合成法在预先生长的ZnO种子层的玻璃衬底上制备出Al和Sb共掺ZnO纳米棒有序阵列薄膜.通过X射线衍射、扫描电镜、透射电镜和选区电子衍射分析表明:所制备的薄膜由垂直于ZnO种子层的纳米棒组成,呈单晶六角纤锌矿ZnO结构,且沿[001]方向择优生长,纳米棒的平均直径和长度分别为27.8nm和1.02μm.Al和Sb共掺ZnO纳米棒有序阵列薄膜的拉曼散射分析表明:相对于未掺杂ZnO薄膜的拉曼振动峰(580cm-1),Al和Sb共掺ZnO阵列薄膜的E1(LO)振动模式存在拉曼位移.当Al和Sb的掺杂量为3.0at%,4.0at%,5.0at%,6.0at%时,Al和Sb共掺ZnO阵列薄膜的拉曼振动峰的位移量分别为3,10,14,12cm-1.E1(LO)振动模式位移是由Al和Sb掺杂ZnO产生的缺陷引起的.室温光致发光结果表明:掺杂Al和Sb后,ZnO薄膜在545nm处的发光强度减小,在414nm处的发光强度增加.这是由于掺杂Al和Sb后,ZnO薄膜中Zni缺陷增加,Oi缺陷减少引起的.An Al and Sb codoped ZnO nanorod ordered array thin film is deposited on a glass substrate with a ZnO seed layer by hydrothermal method.The XRD,SEM,TEM,and SAED results indicate that the thin film consists of nanorods growing in the direction vertical to the ZnO seed layer,and that the nanorods with an average diameter of 27.8 nm and length of 1.02μm consist of single crystalline wurtzite ZnO crystal growing along the [001] direction.Raman scattering analysis demonstrates that the Al and Sb codoped ZnO thin films with the concentrations of Al and Sb of 3.0 at%,4.0 at%,5.0 at%,6.0 at% have Raman shifts of 3,10,14 and 12 cm-1 according to Raman shift 580 cm-1 of undoped ZnO nanorod thin film,respectively.Room temperature photoluminescence reveals that the emission intensity decreases at 545 nm and increases at 414 nm in ZnO film prepared by the codoping of Al and Sb.It is because the decrease of Oi and the increase of Zni are caused by the codoping of Al and Sb.

关 键 词：Al和Sb共掺ZnO薄膜 纳米棒有序阵列 结构表征 拉曼散射 

分 类 号：TB383.2[一般工业技术—材料科学与工程]