体积小重量轻的SiC微波脉冲功率晶体管  

SiC Microwave Pulse Power Transistor with Small Volume and Low Weight

作　　者：田爱华[1] 潘宏菽[1] 

机构地区：[1]专用集成电路重点实验室,石家庄050051

出　　处：《微纳电子技术》2011年第11期697-701,共5页Micronanoelectronic Technology

摘　　要：采用自主开发的工艺加工技术和设计方法,直接将两个微波SiC MESFET管芯在管壳内部进行并联,实现了器件在S波段脉冲状态下(工作频率2GHz,脉冲宽度30μs,占空比10%)输出功率大于30W、功率增益12dB、功率附加效率大于30%的性能指标。由于直接采用管芯并联结构,省略了内匹配网络,器件的体积和重量较以往的Si微波双极功率晶体管大为降低;采用高温氧化技术克服了传统MESFET工艺中PECVD介质产生较高界面态的不足,减小了器件的泄漏电流,提高了器件性能。器件的研制成功,初步显示了SiC微波脉冲功率器件在体积小、重量轻、增益高、脉冲大功率输出和制作工艺简单等方面的优势。Two SiC MESFET chips were parallel connected directly in the pakage with the craft processing technology and design method developed independently,and the device performance indexes of the output power over 30 W,the power gain of 12 dB and the power-added efficiency over 30% were realized at S band pulse（the frequency is 2 GHz,pulse width is 30 μs and duty cycle is 10%）.The internally matched network was omitted because of the chips parallel structure,and the volume and weight of the SiC device were greatly reduced compared to the traditio-nal Si microwave bipolar power transistor.Using high temperature oxygenation technology,the shortage of high interface state density formed by PECVD process of traditional MESFET process was overcomed,the leakage current was reduced,and the performance of the device was improved.The successful development of the device initially shows the superiority of SiC microwave pulse power device in small volume,low weight,high gain,pulse high output power and simple manufacturing process.

关 键 词：碳化硅(SiC) 硅(Si) 脉冲功率晶体管 内匹配技术 微波 

分 类 号：TN304.24[电子电信—物理电子学] TN323.4