基于复合形法的低g微惯性开关结构优化设计  

Structure Optimization Design of Low-g Micro Inertial Switch Based on the Complex Method

作　　者：王超[1] 陈光焱[1] 吴嘉丽[1] 

机构地区：[1]中国工程物理研究院电子工程研究所,四川绵阳621900

出　　处：《微纳电子技术》2011年第11期725-732,共8页Micronanoelectronic Technology

摘　　要：低g值微惯性开关是一种感受惯性加速度、执行开关机械动作的精密惯性装置,其设计目的包括减小体积、提高抗振性和产品间闭合阈值一致性等综合性能。针对一种基于平面矩形螺旋梁的低g值微惯性开关,在给定条件下以增大螺旋梁厚度为目标进行优化建模,运用复合形法的MATLAB语言程序进行优化设计。结果表明,经优化设计后,管芯"弹簧-质量"结构面积为0.09cm2,与初始设计相比减少了约46.5%,满足应用环境的要求。优化模型梁厚度为36.3μm,比初始设计增大了约21%,验证了优化算法的有效性。与传统设计方法相比,复合形法具有较高的实用性和优化效率。为实现对螺旋梁厚度的精确控制,提出了基于双埋层SOI硅片的管芯"弹簧-质量"结构加工工艺方案,并进行了初步的工艺流片。The micro inertial switch is a precision inertial device of feeling inertia acceleration and executing switch mechanical actions.The design purpose includes decreasing the device size,improving the anti-vibration characteristic,the closed threshold consistency between products and other combination properties.For the low-g micro inertial switch based on the planar rectangular spiral beam,the optimization modeling was carried out to increase the thickness of the spiral beam under the given conditions,and the optimization design was also carried out by the MATLAB language program of the complex method.The results show that the area of the spring-mass structure for the chip is 0.09 cm2 after the optimization design,compared with the initial design the area,is decreased about 46.5%,satisfying the requirements of the application environment.The beam thickness of the optimization model is 36.3 μm,which is increased about 21% compared with the initial design,proving the validity of the optimization algorithm.Compared with the conventional design method,the complex method is of higher practicability and optimization efficiency.The processing process program of the spring-mass structure for the chip based on SOI wafers with double buried layers was presented to precisely control the thickness of the spiral beam,and the preliminary manufacture process was carried out.

关 键 词：微惯性开关 优化设计 复合形法 参数化设计 微机电系统(MEMS) 

分 类 号：TH703[机械工程—仪器科学与技术]