耐高温压阻力敏硅芯片及静电键合工艺  

High-Temperature Piezoresistive Pressure Sensitive Silicon Chip and Electrostatic Bonding Process

作　　者：赵立波[1,2] 赵玉龙[2] 热合曼.艾比布力 方续东[2] 李建波[2] 李勇[1] 蒋庄德[2] 

机构地区：[1]清华大学摩擦学国家重点实验室,北京100084 [2]西安交通大学机械制造系统工程国家重点实验室,陕西西安710049 [3]新疆交通职业技术学院汽车与机电工程学院,新疆乌鲁木齐831401

出　　处：《北京理工大学学报》2011年第10期1162-1167,共6页Transactions of Beijing Institute of Technology

基　　金：中国博士后科学基金资助项目(201003110);国家自然科学基金资助项目(50836004;50905139;90923001)

摘　　要：采用微型机械电子系统(MEMS)技术制作出了平膜型硅隔离(SOI)耐高温压阻力敏硅芯片,采用静电键合工艺将该力敏硅芯片封装在硼硅玻璃环上,制作出倒杯式弹性敏感单元.分析了静电键合时力敏硅芯片与玻璃环的对准偏差对力敏硅芯片非线性的影响;实验验证了静电键合工艺对硅芯片温度性能的影响以及制作的耐高温压力传感器的性能.结果表明,对准偏差对硅芯片的非线性有较大影响;静电键合工艺对硅芯片的零位时漂和热零点漂移影响较小;制作的耐高温压力传感器具有优良的性能指标,能满足实际的工程应用需求.The flat-membrane silicon on insulator （SOI） high-temperature piezoresistive pressure sensitive silicon chip has been developed using MEMS （micro electro-mechanical system） technology. It was packaged on the borosilicate glass ring by electrostatic bonding process, thus the inverted-cup elastic-sensitive unit was produced. The influence of the alignment error between the silicon chip and glass ring on the nonlinearity of the pressure sensitive silicon chip was analyzed. The experiments were performed to verify the effect of the electrostatic bonding process on the temperature properties of the pressure sensitive silicon chip, and obtained the characteristics of the fabricated high-temperature pressure sensor. According to the theoretical and experimental results, the alignment error has a great impact on the nonlinearity of the silicon chip, while the electrostatic bonding process has less effect on the zero drifts and thermal zero drifts of the silicon chip. The fabricated high-temperature pressure sensor has fine performances to meet the requirements of engineering applications.

关 键 词：耐高温 压阻力敏硅芯片 硅隔离 静电键合 倒杯式 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]