PNP输入双极运算放大器ELDRS效应的^(60)Coγ辐照高温退火评估方法  

Accelerated simulation method for PNP input bipolar operational amplifiers by γ-irradiation and high temperature annealing

作　　者：许发月[1,2,3] 陆妩[1,2] 王义元[1,2,3] 席善斌[1,2,3] 李明[1,2,3] 王飞[1,2,3] 周东[1,2,3] 

机构地区：[1]中国科学院新疆理化技术研究所,乌鲁木齐830011 [2]新疆电子信息材料与器件重点实验室,乌鲁木齐830011 [3]中国科学院研究生院,北京100049

出　　处：《核技术》2011年第11期810-814,共5页Nuclear Techniques

摘　　要：选用了三种型号的PNP输入双极运算放大器,在正偏和零偏状态下进行了辐照实验,由此对高剂量率辐照后高温退火加速评估方法进行了探索。结果表明,辐照后高温退火的实验结果乘以一定的倍数因子,便可较好地模拟PNP输入双极运算放大器的低剂量率辐照损伤,根据曲线的变化规律可以较快地鉴别器件是否存在低剂量率辐射损伤增强效应。Three types of PNP bipolar operational amplifiers were irradiated under forward bias and zero bias, and high temperature annealing accelerated evaluation methods were investigated. The results show that multiplying a certain factor to the results from high temperature annealing of the irradiated devices, the effect of enhanced low dose radiation sensitivity （ELDRS） can he better simulated, and occurrence of the ELDRS can be judged from the curves.

关 键 词：双极运算放大器 60Coγ辐照 低剂量率辐射损伤增强效应 加速评估方法 

分 类 号：TN431[电子电信—微电子学与固体电子学]