多晶硅薄膜晶体管晶粒间界的微观带隙能态及电学模型的研究进展  

Research progress in characterization of gap energy distribution and electrical model of polysilicon thin film transistors

作　　者：黄君凯[1] 刘璐[1] 邓婉玲[1] 

机构地区：[1]暨南大学信息科学技术学院电子工程系,广东广州510630

出　　处：《暨南大学学报（自然科学与医学版）》2011年第5期528-533,共6页Journal of Jinan University(Natural Science & Medicine Edition)

基　　金：教育部科学技术研究重点项目(211206);中央高校基本科研业务费项目(21611422);广东高校优秀青年创新人才培养计划(育苗工程)项目(LYM10032)

摘　　要：随着多晶硅薄膜晶体管技术的不断提高,其应用也日益广泛,特别是在有源液晶显示器,以及新一代有机发光显示器件等领域的应用极为迅速.对多晶硅薄膜晶体管的电学特性进行完整表征和模型研究,必须建立在准确的晶界带隙能态分布信息的基础上.本研究全面分析了多晶硅材料中晶界带隙能态分布的研究现状及数学模型,这是多晶硅薄膜晶体管建模的基础;重点介绍了RPI模型及最新的模型研究进展,并对这些模型进行了评述;最后提出了多晶硅薄膜晶体管模型的建模方向与研究策略,包括模型的完整性、普适性和系统性.The technical improvement of polycrystalline silicon thin-film transistors （poly-Si TFTs） makes their applications become increasingly important in the new generation of display device, especially for active-matrix liquid-crystal display and organic light-emitting diode. Physically a complete character- ization and modeling of the poly-Si TFTs＇ electrical characteristic should base on the accurate distribution -of grain boundaries （GB） density of state （DOS）. Research progress and mathematical models for distri- bution of GB DOS ih polysilicon material are described in detail, which are the base of modeling for poly- Si TFTs. The emphasis of this paper is laid on RPI model and new research progress in modeling, as well as their performances. Therefore, some research strategies for improvement of poly-Si TFTs compact mod- els are proposed, including integrality, suitability and systematic models.

关 键 词：多晶硅薄膜晶体管 模型 晶界带隙能态 

分 类 号：TN303[电子电信—物理电子学]