Influence of GaAs substrate on the transmission performance of epitaxially grown Fabry-P'erot filter  

作　　者：王伟 黄永清 段晓峰 颜强 任晓敏 蔡世伟 郭经纬 黄辉 

机构地区：[1]State Key Laboratory of Information Photonics and Optical Communications,Ministry of Education,Beijing University of Posts and Telecommunications

出　　处：《Chinese Optics Letters》2011年第11期81-84,共4页中国光学快报（英文版）

基　　金：supported by the National "973" Program of China (No. 2010CB327600);the National "863" Program of China (No. 2007AA03Z418);the Program for Changjiang Scholars and Innovative Research Team in University (No. IRT0609);the Fundamental Research Funds for the Central University (No. BUPT2011RC0403);the National Natural Science Foundation of China (No. 61020106007);the "111" Project of China (No. B07005)

摘　　要：The influence of GaAs substrate on the transmission performance of a multi-film Fabry-P＇erot filter （FPF）,fabricated by metalorganic chemical vapor deposition epitaxial growth on GaAs substrate,is investigated using the transfer matrix method.On the basis of the theoretical simulation,we determine that the quality of the resonant transmission peak of this epitaxially grown FPF （EG-FPF） deteriorates through splitting when the substrate is taken into account.Rapid periodic oscillation of peak-transmittivity along with the alteration of substrate thickness is also observed in the simulation results.Finally,a remarkably improved transmission performance of the EG-FPF is obtained by thinning the substrate down to a suitable thickness range through well-controlled grinding and polishing.The influence of GaAs substrate on the transmission performance of a multi-film Fabry-P＇erot filter （FPF）,fabricated by metalorganic chemical vapor deposition epitaxial growth on GaAs substrate,is investigated using the transfer matrix method.On the basis of the theoretical simulation,we determine that the quality of the resonant transmission peak of this epitaxially grown FPF （EG-FPF） deteriorates through splitting when the substrate is taken into account.Rapid periodic oscillation of peak-transmittivity along with the alteration of substrate thickness is also observed in the simulation results.Finally,a remarkably improved transmission performance of the EG-FPF is obtained by thinning the substrate down to a suitable thickness range through well-controlled grinding and polishing.

关 键 词：GAAS Influence of GaAs substrate on the transmission performance of epitaxially grown Fabry-P’erot filter 

分 类 号：TN713[电子电信—电路与系统]