共振隧穿现象与LED失效模型的分析方法  

LED Failure Analysis with Phenomenon of Resonant Tunneling Model

作　　者：袁晨[1,2] 严伟[1,2] 

机构地区：[1]上海北京大学微电子研究院(SHRIME),上海201203 [2]北京大学软件与微电子学院,北京100871

出　　处：《北京大学学报（自然科学版）》2011年第6期1151-1154,共4页Acta Scientiarum Naturalium Universitatis Pekinensis

基　　金：上海市科学技术委员会(09DZ1141504);国家自然科学基金(61072038)资助

摘　　要：针对实验中发现的受静电损伤LED与共振隧穿二极管（RTD）模型有相似表现的现象，提出一种LED失效分析方法。经过500～3000V的HBM模型损伤，一部分失效LED的1-V曲线表现出类似共振隧穿二极管（RTD），正向电流呈现隧道电流的特征，证实静电损伤路径穿越了LED内量子阱，改变了内部的结构。将这种曲线与RTD做对比，并推广至其他失效曲线的分析，建立了一套通过伏安特性曲线对比方法，分析LED受损位置。这种失效模型分析方式可以不借助微观实验，直接进行判断，并可通过经验不断丰富。Abstract The authors provided a failure analysis method of LEDs based on the fact that LEDs suffered electro- static damage sometimes were familiar with the resonant tunneling diode （RTD） model. After they were destroyed by HBM model over 500-3000 V, part of the failure LEDs showed as a resonant tunneling diode （RTD） in 1-V curves, which proved that the electrostatic damage path went through the LED internal quantum wells. By contrasting with more devices, a set of 1-V curve analysis method can be established for the location of LED damage. This failure analysis with the advantage of reducing observations by OBIRCH can be enriched through exoerience.

关 键 词：LED 静电 失效分析 

分 类 号：TN312.8[电子电信—物理电子学]