Development of solar-blind AlGaN 128x128 Ultraviolet Focal Plane Arrays  

作　　者：YUAN YongGang1, ZHANG Yan1, CHU KaiHui1, LI XiangYang1, ZHAO DeGang2 & YANG Hui2 1 State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China 2 Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China 

出　　处：《Science China(Technological Sciences)》2008年第6期820-826,共7页中国科学（技术科学英文版）

摘　　要：This paper reports the development of solar-blind aluminum gallium nitride (AlGaN) 128×128 UV Focal Plane Arrays (FPAs). The back-illuminated hybrid FPA archi- tecture consists of an 128x128 back-illuminated AlGaN PIN detector array that is bump-mounted to a matching 128x128 silicon CMOS readout integrated circuit (ROIC) chip. The 128×128 p-i-n photodiode arrays with cuton and cutoff wave-lengths of 233 and 258 nm, with a sharp reduction in response to UVB (280―320 nm) light. Several examples of solar-blind images are provided. This solar-blind band FPA has much better application prospect.This paper reports the development of solar-blind aluminum gallium nitride (AlGaN) 128×128 UV Focal Plane Arrays (FPAs). The back-illuminated hybrid FPA archi- tecture consists of an 128x128 back-illuminated AlGaN PIN detector array that is bump-mounted to a matching 128x128 silicon CMOS readout integrated circuit (ROIC) chip. The 128×128 p-i-n photodiode arrays with cuton and cutoff wave-lengths of 233 and 258 nm, with a sharp reduction in response to UVB (280―320 nm) light. Several examples of solar-blind images are provided. This solar-blind band FPA has much better application prospect.

关 键 词：ALGAN photodiode ULTRAVIOLET FPA solar-blind 

分 类 号：TM914.4[电气工程—电力电子与电力传动]