掩膜对GaAs基二维光子晶体ICP刻蚀效果的影响  

Impact of Mask on the Effect of ICP Etched on GaAs-Based Two-Dimensional Photonic Crystals

作　　者：徐晨[1] 王宝强[1] 刘英明[1] 解意洋[1] 沈光地[1] 

机构地区：[1]北京工业大学北京市光电子技术实验室,北京100124

出　　处：《纳米技术与精密工程》2011年第3期279-282,共4页Nanotechnology and Precision Engineering

基　　金：国家高技术研究发展计划(863计划)资助项目(2008AA03Z402);北京市自然科学基金资助项目(4092007)

摘　　要：结合刻蚀GaAs基光子晶体在光子晶体垂直腔面发射激光器中的应用,研究了光刻胶、SiO2掩膜的特性以及对GaAs基二维光子晶体ICP刻蚀效果的影响,并分析了ICP刻蚀小尺寸光子晶体时,造成底面凹凸不平、侧壁粗糙、垂直度差的原因.最后,调整工艺条件,利用BP212-7CP光刻胶做掩膜,成功制作了直径为1.2～4.0μm、深度为1.5μm的侧壁光滑垂直、底面平整的高质量光子晶体结构.Based on the application of etching of GaAs-based photonic crystals to photonic crystals vertical cavity surface emitting laser,the characteristics of photoresist and SiO2 masks were studied and their impact on the effect of ICP etched on GaAs-based two-dimensional photonic crystals was explored.Reasons for accidented flat,bad vertical degree and coarse sidewall were analyzed when small size photonic crystals were etched.Finally,by modification of the fabrication conditions,high quality photonic crystals with smooth and vertical sidewall and flat bottom were achieved with BP212-7CP photoresist as mask.The diameter of the photonic crystals is 1.2—4.0 μm and the depth of photonic crystals is 1.5 μm.

关 键 词：掩膜 光子晶体 感应耦合等离子体(ICP) GAAS 

分 类 号：TN305.7[电子电信—物理电子学]