基于传热反问题的绝缘栅双极型晶体管模块温度计算方法  

Temperature calculation method of IGBT modules based on inverse heat conduction problem

作　　者：魏克新[1,2] 杜明星[1,2] 

机构地区：[1]天津大学电气与自动化工程学院,天津300072 [2]天津理工大学天津市复杂系统控制理论及应用重点实验室,天津300384

出　　处：《吉林大学学报（工学版）》2011年第6期1743-1747,共5页Journal of Jilin University:Engineering and Technology Edition

基　　金：国家自然科学基金项目(50977063);'863'国家高技术研究发展计划项目(2008AA11A145);天津市科技支撑计划重点项目(09ZCKFGX01800)

摘　　要：在分析绝缘栅双极型晶体管(Insulated grid bipolar transistor,IGBT)模块内部传热机理的基础上,建立了集总参数的温度计算模型。采用边界元法对传热反问题的解空间进行离散。采用共轭梯度法求解传热反问题,得到较准确的等效热阻和等效热容值。该方法通过与制造商提供的IGBT模块结温实验数据和有限元方法计算的结果相比较,计算误差小于5%。A model was built for the calculation of temperature of the insulated grid bipolar transistor（IGBT） using the lumped parameters based on analyzing the heat transfer mechanism in the IGBT.The solution space of the inverse heat transfer problem was discreted by the boundary element method.The inverse heat transfer problem was solved by the conjugated gradient method to get the accurate equivalent thermal resistance and capacitance.The results by the proposed method were compared with the experimental data of the junction temperature of IGBT provided by the manufacturer technical documents as well as with the results by the finite element method,the temperature calculation error is less than 5%.

关 键 词：电气工程 温度计算模型 传热反问题 绝缘栅极双极型晶体管 结温 

分 类 号：TM930[电气工程—电力电子与电力传动] TK311[动力工程及工程热物理—热能工程]