低真空高能电子反射衍射仪在材料分析中的应用  

Reflection High Energy Electron Diffraction Instrument and Application to Material Study Under Low Vacuum

作　　者：高伟[1,2] 陈尔纲[1,2] 

机构地区：[1]昆明物理研究所 [2]云南大学物理系

出　　处：《云南大学学报（自然科学版）》1999年第S1期66-69,共4页Journal of Yunnan University(Natural Sciences Edition)

摘　　要：阐述了利用型号为ＹＷＤ－１Ａ的扫描电子显微镜如何改造成高能电子反射衍射仪（ＲＨＥＥＤ）．利用该台高能电子反射衍射仪的衍射花样对ＣｄＺｎＴｅ，ＨｇＣｄＴｅ半导体材料的表面结构进行测定，证实了ＣｄＺｎＴｅ（１１１）Ｂ和ＨｇＣｄＴｅ（１１１）Ｂ面的１×１表面再构，同时还对ＣｄＺｎＴｅ及Ｓｉ进行了晶格常数的测定，与理论误差相比误差小于２％．A scanning electron microscope(SEM) is reequiped into a reflection high energy electron diffraction instrument(RHEED).It has been applied to study some semiconductors,such as CdZnTe,HgCdTe and Si, and has solved some problems.According to the pattern of RHEED,we can determine the direction of electron beam,and we can measure the surface structure of materials.From the experimental results we confirm CdZnTe(111)B1×1 and HgCdTe(111)B1×1 surface structure under room temperature.In the mean time we take use of RHEED to measure the lattice constant of CdZnTe and Si,compared with theoretical values,the error is less than 2%.

关 键 词：高能电子反射衍射(RHEED) 晶格常数 表面再构 

分 类 号：O485[理学—固体物理] O485[理学—物理]