Spatial Distribution of EL2 Defect in Semi-insulating GaAs  

作　　者：汝琼娜 李光平 何秀坤 

出　　处：《Rare Metals》1994年第4期296-298,共3页稀有金属（英文版）

摘　　要：It has advantages of accuracy, rapidity and non-destruction that EL2 distribution in semi-insulating LECGaAs crystal has been measured by near infrared absorption method with a high spatial resolution. Now EL2defect existed in all wafer is directly observed by 1 .0972 μm and 2 μm absorption curves obtained from a suc-cessive and automatical horizontal scan across the different bands parallelly ranged with tbe diameter of asemi-insulating GaAs wafer. Not only EL2 distribution across the wafer corresponding with that of dislocationdensities has been indicated but also the fine structure found.It has advantages of accuracy, rapidity and non-destruction that EL2 distribution in semi-insulating LECGaAs crystal has been measured by near infrared absorption method with a high spatial resolution. Now EL2defect existed in all wafer is directly observed by 1 .0972 μm and 2 μm absorption curves obtained from a suc-cessive and automatical horizontal scan across the different bands parallelly ranged with tbe diameter of asemi-insulating GaAs wafer. Not only EL2 distribution across the wafer corresponding with that of dislocationdensities has been indicated but also the fine structure found.

关 键 词：EL2defect SI-GAAS Infrared absorption 

分 类 号：TG146.431[一般工业技术—材料科学与工程]