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机构地区:[1]Institute of Electronics,Academia Sinica,Beijing [2]Scientific Instruments Factory,Academia Sinica,Beijing
出 处:《Journal of Electronics(China)》1990年第4期336-346,共11页电子科学学刊(英文版)
摘 要:In order to obtain uniform exposure in variably shaped electron beam lithography,the beam current density and edge resolution on the target must not change for different spotshapes and sizes.The key to the goal is the appropriate design of shaping deflectors.A linearand rotation compensation approach is presented.Values of linear and rotation compensationfactors versus the distances between electron source image and centers of deflectors are measuredon an experimental electron beam column with variable spot shaping.The experimental resultsare in good agreement with the calculated ones.In order to obtain uniform exposure in variably shaped electron beam lithography, the beam current density and edge resolution on the target must not change for different spot shapes and sizes.The key to the goal is the appropriate design of shaping deflectors.A linear and rotation compensation approach is presented.Values of linear and rotation compensation factors versus the distances between electron source image and centers of deflectors are measured on an experimental electron beam column with variable spot shaping.The experimental results are in good agreement with the calculated ones.
关 键 词:ELECTRON beam LITHOGRAPHY ELECTRON Optics SHAPING DEFLECTOR
分 类 号:TN01[电子电信—物理电子学]
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