等离子体氮化SiO_2膜的电学性质  

Electrical Characteristics of Plasma Nitrided SiO_2 Films

作　　者：蔡跃明 

出　　处：《军事通信技术》1990年第1期54-59,共6页Journal of Military Communications Technology

摘　　要：本文研究了等离子体氮化 SiO_2膜的电学性质,在低温下获得了性能优良的介质膜。The electrical characteristics of plasma nitrided SiO_2 is investigated in this paper The dielectric films with superior properties have been obtained at low temperature.

关 键 词：SiO₂ 等离子体氮化 MOS 结构 电子陷阱 

分 类 号：E96[军事—军事通信学]