常压MOCVD法制备ZnTe单晶膜  

GROWTH OF ZnTe SINGLE CRYSTAL FILMS BY ATMOSPHERIC PRESSURE METAL ORGANIC CHEMICAL VAPOR DEPOSITION

作　　者：江风益[1] 范广涵[2] 宋士惠[2] 范希武[2] 

机构地区：[1]江西工业大学 [2]中国科学院长春物理研究所

出　　处：《南昌大学学报（工科版）》1990年第3期60-62,88,共4页Journal of Nanchang University(Engineering & Technology)

摘　　要：本文叙述了常压MOCVD法制备ZnTe单晶膜的方法.通过x-ray衍射和光政发光的测量,表明已生长出高质量的ZnTe单晶膜.为生长ZnSxTel-x固溶体,获得从绿色到紫色的发光材料准备了条件.ZnTe Single crystal films have been grown by atmospheric pressuremetal organic chemical vapor deposition (MOCVD) for the first time. Themeasurements of x--ray diffraction and photoluminescence emission spectra show thatthe ZnTe single crystals films have good qualities. We made the good condition forgrowing the ZnSxTel-x mixed crystals in order to obtain the green to violetluminescence materials.

关 键 词：金属有机化学汽相沉淀 ZnTe单晶膜 光致发光 X射线衍射 

分 类 号：T-55[一般工业技术]