脉冲激光烧蚀过程中阻尼系数的角度分布  

Angle distribution of damping coefficient during pulse laser ablation

作　　者：王英龙[1] 翟小林[1] 丁学成[1] 王世俊[1] 梁伟华[1] 邓泽超[1] 褚立志[1] 傅广生[1] 

机构地区：[1]河北大学物理科学与技术学院,河北保定071002

出　　处：《功能材料》2011年第B11期825-827,831,共4页Journal of Functional Materials

基　　金：国家重点基础研究发展计划(973计划)前期研究专项资助项目(2011CB612305);国家自然科学基金资助项目(10774036);河北省自然科学基金资助项目(E2008000631)

摘　　要：采用脉冲激光烧蚀(PLA)技术,在半圆环衬底上制备了含有纳米晶粒的硅(Si)晶薄膜。分析了纳米Si晶粒尺寸和阻尼系数随角度和压强的变化关系。使用扫描电子显微镜(SEM)、X射线衍射仪(XRD)和拉曼光谱仪(Raman)对其表面形貌和结构进行了表征。结果表明,在压强一定的情况下,纳米Si晶粒的尺寸和阻尼系数均相对于轴向呈对称分布,并随着偏离轴向角度的增加而减小;同时随着压强增大,晶粒尺寸和阻尼系数在各个角度处的值均增大。The nanocrystalline silicon thin film was deposited on a half-cirque substrate using pulse laser ablation.The changes of the silicon grain size and the damping coefficient with the angle and pressure were investigated.The surface morphology and microscopes of silicon films were characterized by scanning electron microscopes（SEM）,X-ray diffraction（XRD） and Raman spectrum.The results indicated that the grain average size and damping coefficients in the axial symmetric distribution relative deviation,and then decrease with increasing of the angle under certain pressure.Meanwhile,the grain size and damping coefficient increase as the pressure increases at each angle.

关 键 词：纳米SI晶粒 脉冲激光烧蚀 平均尺寸 阻尼系数 

分 类 号：O484.1[理学—固体物理]