静电放电电磁脉冲对微电子器件的双重作用  

The Dual Effects of ESP EMP on Microelectronic Device

作　　者：祁树锋[1] 张晓倩[2] 曾泰[3] 刘红兵[4] 杨洁[1] 

机构地区：[1]第二炮兵工程学院六系,陕西西安710025 [2]太原卫星发射中心,山西太原030000 [3]空军雷达学院二系,湖北武汉430010 [4]中国电子科技集团第13研究所,河北石家庄050051

出　　处：《河北师范大学学报（自然科学版）》2011年第6期579-581,共3页Journal of Hebei Normal University：Natural Science

基　　金：国家自然科学基金(50237040);面上项目(60671044)

摘　　要：研究了低电压的静电放电(ESD)对微电子器件造成的潜在性失效,采用人体模型(HBM)对微波低噪声晶体管2SC3356施加不同电压的ESD应力.结果表明:高电压的ESD注入对2SC3356器件造成的损伤主要是不可恢复的损伤,而低电压的ESD注入对2SC3356器件造成的损伤是可恢复的损伤;ESD的注入对器件有双重作用:一方面ESD在器件中可引入潜在性损伤,另一方面ESD对器件有加固作用,并且注入ESD电压越高,这些作用越明显.A latent failure of microelectric device caused by the low-level electrostatic discharge（ESD） is studied.A series of different low-level ESD stresses are imposed on microwave low noise transistor 2SC3356 using the human body model（HBM）.It is shown that the harm of 2SC3356 device caused by high-voltage ESD is mainly unrecoverable harm.However the harm of 2SC3356 device caused by low-voltage ESD is recoverable harm.At the same time,it is found that ESD infusion has dual function to the device：the ESD can lead to latent harm in the device,on the other hand,the ESD has reinforced function to the device.These functions are more obvious with the infused ESD voltage higher.

关 键 词：ESD 微电子器件 潜在性失效 

分 类 号：O441[理学—电磁学]