近贴聚焦成像器件管体熔铟层气孔产生的因素分析  

Analysis for Porosity in Pour Indium Layer of Proximity Focusing Image Device Tube Body

作　　者：徐江涛[1] 程耀进[1] 张太民[1] 李敏[1] 师宏立[1] 刘蓓蓓[1] 侯志鹏[1] 刘峰[1] 祝婉娉 

机构地区：[1]北方夜视科技集团股份有限公司西安分公司,陕西西安710119

出　　处：《真空电子技术》2011年第5期58-60,共3页Vacuum Electronics

摘　　要：为解决成像器件管体熔铟层产生流散不均匀、熔层断裂、体内气泡造成的光电阴极与管体封接漏气问题,深入分析了产生根源,研究了一种管体注铟技术,使管体注铟合格率达到了100%,光电阴极与管体封接气密性成品率达到了98%。This paper intend to solve the problems of pour indium layer of tube body for proximity focusing image device which include uniform dispersion of indium,weld layer fracture,air-leaking between optoelectronic cathode and tube body sealing.We deeply analyze the causes and research the technology of tube body pouring indium which enhance the qualified rate of tube body pouring indium to 100% and qualified rate of air tightness between optoelectronic cathode and tube body sealing to 98%.

关 键 词：近贴聚焦 成像器件 管体注铟 熔层气泡 铟锡合金层 

分 类 号：TN383[电子电信—物理电子学]