光学发射谱在硫掺杂金刚石薄膜制备中的应用  

Application of optical emission spectrum in synthesis of sulfur doped diamond films

作　　者：葛大勇[1] 赵庆勋[1] 杨保柱[1] 何雷[1] 

机构地区：[1]河北大学物理科学与技术学院,河北保定071002

出　　处：《实验技术与管理》2011年第11期41-43,46,共4页Experimental Technology and Management

基　　金：河北省自然科学基金资助项目(E2009000207);河北省自然科学基金基地专项资助项目(08B010);河北大学科研基金资助项目(2008Q15)

摘　　要：利用辉光等离子体辅助热丝化学气相沉积法,制备硫掺杂n型金刚石薄膜,利用光学发射谱技术对其生长环境进行原位诊断,分析合成机理及生长的最佳条件。结果表明,合成金刚石薄膜的合成反应区中主要粒子为CH、CH+、活性H原子,提高工作气压和硫碳配比浓度有利于提高硫掺杂浓度,在低温条件下合成了高品质的硫掺杂n型金刚石薄膜。The sulfur doped n-type diamond films were prepared by the GPCVD （glow plasma chemical vapour deposition） technique. Diagnosis of plasma envieonment for synthesizing diamond films was conducted by optical emission spectra. The results show that the concentration of sulfur doped in diamond film was improved when the gas pressure and Rs/c were improved, and the high-quality sulfur doped n-type diamond film was ob tained at low deposition temperature. The experimental conditions for system of [CH4 ＋ H2 ] have been optimized.

关 键 词：金刚石薄膜 光学发射谱 N型掺杂 硫掺杂 

分 类 号：O484[理学—固体物理]