pH值对电沉积CuInSe_2薄膜的组份、结构及光电性能的影响  

Impact of pH Value on Composition,Structure and Photo-ElectricProperties of Electrodeposited CuInSe_2 Thin Films

作　　者：王信春[1] 王广君[1] 庞山[1] 万绍明[1] 张兴堂[1] 杜祖亮[1] 

机构地区：[1]f河南大学特种功能材料教育部重点实验室,开封475004

出　　处：《无机化学学报》2011年第12期2437-2442,共6页Chinese Journal of Inorganic Chemistry

基　　金：国家自然科学基金(No.10874040,20773103);教育部科技创新工程重大项目培育基金(No.708062)资助项目

摘　　要：本文采用一步恒电位沉积法在铟锡氧化物(ITO)基底上制备CuInSe2薄膜,研究了沉积过程中不同的离子浓度配比及pH值对CuInSe2膜结构性能的影响。利用扫描电子显微镜(SEM)、X射线能谱仪(EDS)及X射线衍射仪(XRD)研究了薄膜材料的结构性能,结果发现pH值对薄膜的化学成份、表面形貌、晶格结构都有显著影响,通过控制合适的浓度及酸度分别制备了高质量富铟与富铜薄膜。利用表面光电压(SPS)技术分别对富铟与富铜薄膜的光电分离特性进行了研究,结果发现富铟薄膜具有很强的光电响应;而富铜薄膜由于Cu-Se相的存在,在薄膜中形成了新的界面,电子-空穴对在其界面处因捕获而发生复合,从而导致其光电响应的强烈降低。所得到的结果为提高铜铟硒薄膜的光电效率提供了有价值的新思路。In this paper,CuInSe2 thin films were prepared by one-step potentiostatic electrodeposition method on the indium tin oxide（ITO） substrates,we researched the effect of the different deposition concentration ratio and pH values on the structural performance of CuInSe2 thin films in the process.The surface morphology,stoichiometric ratio and crystal structure were characterized by scanning electron microscopy（SEM）,X-ray energy dispersive spectroscopy（EDS） and X-ray diffraction（XRD） respectively.The results showed that pH value have a significant impact on the surface morphology、chemical composition、crystal structure of these thin films,high-quality thin films with indium-rich or copper-rich have been prepared by controlling the appropriate concentration and acidity.We researched the opto-electrical separation properties of Cu-rich and In-rich CuInSe2 thin films by the surface photovoltage spectroscopy（SPS）,the results showed that indium-rich film has a strong opto-electrical response;Due to the Cu-Se phase exist in these copper-rich films,which form a new interface in the films,electron-hole pairs recombine at the interface owing to the capture,result in a strong depression of opto-electrical response.

关 键 词：CUINSE2 富铜 富铟 电沉积 太阳能电池 

分 类 号：O484.1[理学—固体物理]