透明导电薄膜ZnO∶Mn的低温制备及性能研究  

Low Temperature Growth and Properties of Transparent Conducting ZnO∶Mn Films

作　　者：张化福[1] 杨书刚[2] 王永在[3] 郭红[3] 刘汉法[1] 

机构地区：[1]山东理工大学理学院,淄博255049 [2]山东理工大学教务处,淄博255049 [3]山东理工大学材料分析测试中心,淄博255049

出　　处：《真空科学与技术学报》2011年第6期657-660,共4页Chinese Journal of Vacuum Science and Technology

基　　金：山东省自然科学基金资助项目(ZR2009GQ011)

摘　　要：利用直流磁控溅射法在室温玻璃衬底上制备出了可见光透过率高、电阻率低的掺锰氧化锌(ZnO∶Mn)透明导电薄膜。实验制备的ZnO∶Mn为六方纤锌矿结构的多晶薄膜,且具有垂直于衬底方向的c轴择优取向。实验结果表明,靶与衬底之间的距离对ZnO∶Mn薄膜的生长速率、残余应力及电学性能有很大影响,而对薄膜的晶粒尺寸和光学性能影响不大。考虑薄膜的电学、光学及力学性能,认为靶与衬底之间的最佳距离为7.0 cm。在此条件下制备的ZnO∶Mn薄膜的电阻率达到4.2×10-4Ω.cm,可见光透过率为86.6%,而残余应力仅为-0.025 GPa。The transparent conducting Mn-doped zinc oxide（ZnO∶Mn） films were deposited by direct current magnetron sputtering on glass substrates at a fairly low temperature.The impacts of the growth conditions,including the pressure,substrate temperature,sputtering power,and target/substrate separation,on its microstructures and its properties were evaluated.The results show that the target/substrate distance strongly affects the deposition rate,stress and electric properties.At an optimized target/substrate separation of 7.0 cm,the ZnO∶Mn film has a resistivity of 4.2×10-4 Ω·cm,a transmittance about 86.6%,and a residue compress stress of 0.025 GPa.Possible mechanisms were also tentatively discussed.

关 键 词：ZnO∶Mn 透明导电薄膜 靶与衬底之间的距离 应力 

分 类 号：TN304.2[电子电信—物理电子学] TN304.055