化学腐蚀对超薄锗片机械强度的影响  

Chemical Etching of Thin Film Mechanical Strength of Germanium

作　　者：窦连水[1] 刘晓伟[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《电子工业专用设备》2011年第11期15-17,共3页Equipment for Electronic Products Manufacturing

摘　　要：随着锗太阳能光伏产业的发展,锗抛光片得到了广泛的应用。机械强度对锗衬底抛光片的质量和成品率有着重要的影响,采用化学腐蚀工艺,通过酸碱腐蚀实验的开展以及腐蚀温度、腐蚀液配比的控制,确立了提高锗单晶片机械强度的化学腐蚀工艺,腐蚀后晶片表面均匀,磨削纹路清晰可见,TTV小于3μm,机械强度为31～40N,完全满足应用要求。With the germanium solar photovoltaic industry, germanium polished wafers has been widely used. Mechanical strength of the germanium substrate polished quality and yield has an important effect, we use chemical etching process, experiments carried out by acid corrosion and corrosion temperature, corrosive liquid ratio control, established to improve the mechanical strength of germanium single-chip chemical corrosion process, corrosion even after the wafer surface, grinding lines clearly visible, TTV less than 3 μm, mechanical strength for the 31-40N, fully meet the application requirements.

关 键 词：化学腐蚀 机械强度 超薄锗片 

分 类 号：TN305.2[电子电信—物理电子学]