磁控溅射制备的含He纳米晶铜膜的微结构分析  

Microstructural study of helium-containing nanocrystalline copper films co-deposited by magnetron sputtering

作　　者：周冰[1] 邓爱红[1] 张丽然[1] 周宇璐[1] 李悦[1] 陈燕[1] 

机构地区：[1]四川大学物理科学与技术学院物理系,成都610064

出　　处：《四川大学学报（自然科学版）》2011年第6期1371-1374,共4页Journal of Sichuan University(Natural Science Edition)

基　　金：国家自然科学基金(10775102)

摘　　要：采用直流磁控溅射法,在不同的He/Ar混合气氛下,制备了不同He含量的铜膜.利用弹性反冲探测(ERD)方法探测了铜膜中氦的含量和深度分布,实验发现引入铜膜中的氦深度分布较均匀;并本文采用X射线衍射(XRD)分析了铜膜中氦的微结构。实验结果表明随着铜膜中氦含量的逐渐增加,对应Cu(111)晶面的峰强也有所增强;最后应用了慢正电子柬分析(SPBA)技术测量了不同含氦铜膜的缺陷结构,随着铜膜中氦的增加,S参数会发生相应的变化.Helium-containing copper films were prepared by magnetron sputtering on Si substrates in a gas mixture ambience of helium/argon. Various helium concentrations were introduced into the copper films by altering the He/Ar flow ratios. Elastic recoil detection （ERD） was used to estimate the helium concentrations and corresponding depth profiles. The results of ERD showed almost homogeneous distributions of He concentration. The microstructure of helium in the copper films was also investigated by X-ray diffraction （XRD）. The results indicated that the increment of helium content in the Cu films induces the increase of the diffraction peak intensity from the Cu （111） lattice plane. Finally, the defect structure of He-Cu films was studied by slow positron beam analysis （SPBA）. The values of S-parameter of different He-Cu films varied with the increase of helium content.

关 键 词：磁控溅射 纳米晶铜膜 X射线衍射 慢正电子束分析 

分 类 号：O571[理学—粒子物理与原子核物理]