A 4.69-W/mm output power density InAlN/GaN HEMT grown on sapphire substrate  

作　　者：刘波 冯志红 张森 敦少博 尹甲运 李佳 王晶晶 张效帏 房玉龙 蔡树军 

机构地区：[1]Science and Technology on ASIC Laboratory,Hebei Semiconductor Research Institute [2]School of Materials Science and Engineering,Harbin Institute of Technology

出　　处：《Journal of Semiconductors》2011年第12期68-71,共4页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Nos.60890192,60876009).

摘　　要：We report high performance InA1N/GaN HEMTs grown on sapphire substrates. The lattice-matched InA1N/GaN HEMT sample showed a high 2DEG mobility of 1210 cmZ/（V.s） under a sheet density of 2.6 × 10^13 cm^-2. Large signal load-pull measurements for a （2 × 100 μm） x 0.25 μm device have been conducted with a drain voltage of 24 V at 10 GHz. The presented results confirm the high performances reachable by InAIN- based technology with an output power density of 4.69 W/ram, a linear gain of 11.8 dB and a peak power-added efficiency of 48%. This is the first report of high performance InA1N/GaN HEMTs in China's Mainland.We report high performance InA1N/GaN HEMTs grown on sapphire substrates. The lattice-matched InA1N/GaN HEMT sample showed a high 2DEG mobility of 1210 cmZ/（V.s） under a sheet density of 2.6 × 10^13 cm^-2. Large signal load-pull measurements for a （2 × 100 μm） x 0.25 μm device have been conducted with a drain voltage of 24 V at 10 GHz. The presented results confirm the high performances reachable by InAIN- based technology with an output power density of 4.69 W/ram, a linear gain of 11.8 dB and a peak power-added efficiency of 48%. This is the first report of high performance InA1N/GaN HEMTs in China's Mainland.

关 键 词：InA1N/GaN HEMT output power density metal-organic chemical vapor deposition 

分 类 号：TN304[电子电信—物理电子学]