N-X共掺p型ZnO薄膜的研究进展  

Latest Progress of N-X Codoped p-Type ZnO Thin Films

作　　者：李万俊[1] 孔春阳[1] 秦国平[1,2] 阮海波[1,2] 杨天勇[1] 梁薇薇[1] 孟祥丹[1] 赵永红[1] 

机构地区：[1]重庆师范大学光学工程实验室,重庆400047 [2]重庆大学物理学院,重庆400030

出　　处：《材料导报》2011年第23期49-54,共6页Materials Reports

基　　金：重庆市自然科学基金(AC40304)

摘　　要：获得高质量稳定的p型ZnO薄膜是实现ZnO基光电器件化的关键。目前,国际上公认Ⅴ族元素中的N替代O位(NO)是实现p型ZnO较理想的掺杂途径。但p-ZnO∶N薄膜的导电性能会随着时间、光照、温度条件发生变化,稳定性不足。大量的理论和实验研究表明N基二元共掺(N-X)可以提高N在ZnO薄膜中的固溶度,浅化N的受主能级,且在很大程度上能够改善p型ZnO的导电性能,有利于获得稳定的p型ZnO薄膜。为此,从N基施主受主共掺、双受主共掺以及其它共掺方面综述了N-X共掺p型ZnO薄膜的研究现状。Fabrication of high quality and stable p-type ZnO films is the key to realize the ZnO based optoelectronic devices. Recently, it is internationally known that N is expected to be a promising acceptor in ZnO if N acting as a suhstitutioa on the O suhlattice. However, the conductivity of p-type ZnO：N thin films is not stable with the time duration, illumination and temperature. Theories and experiments indicate that N-X codoping can increase the N solubility of ZnO thin films, lower the N acceptor energy, improve the conductivity of p-type ZnO films, it is favourable for realizing the stable p-type ZnO. Therefore, the recent advances of the studies on N-X codoped p-type ZnO thin films in following as N-based donor-acceptor codoPing, dual acceptors codoping and other codoping method is summarized

关 键 词：P型ZNO薄膜 N—X共掺 稳定性 

分 类 号：TQ170.7[化学工程—硅酸盐工业]