退火温度对透明导电InSnGaMo氧化物薄膜性能的影响  

Influence of Annealing Temperature on Properties of Transparent Conducting InSnGaMo Multivariate Films

作　　者：刘振华[1] 刘宝琴[1] 张春伟[1] 王书昶[1] 刘拥军[1] 何军辉[1] 

机构地区：[1]扬州大学物理科学与技术学院,扬州225002

出　　处：《材料导报（纳米与新材料专辑）》2011年第2期331-334,343,共5页

基　　金：江苏省科技支撑计划项目(BE2009106)

摘　　要：利用脉冲激光沉积法在石英衬底上制备出可见光透过率高、电阻率极低的Ga、Mo共掺杂ITO基透明导电InSnGaMo复合氧化物薄膜,研究了退火温度对薄膜结构、表面形貌、光电性能的影响。实验结果表明,退火温度对InSnGaMo复合氧化物薄膜形貌、光电性能均有很大影响。XRD、SEM和霍尔测试结果表明,随着退火温度的升高,薄膜晶粒度增大,电阻率快速下降,可见光平均透过率明显提高。当退火温度为500℃时,InSnGaMo复合氧化物薄膜的电阻率最低为1.46×10-4Ω.cm,载流子浓度和迁移率最高分别为6.56×1020cm-3、65cm2/(V.s),在可见及近红外区平均透过率达92%以上,尤其当波长为362nm时,最高透射率可达99%。The microstructures and properties of the transparent conducting InSnGaMo multivariate hlms, cleposited by pulse laser deposition on quartz glass substrates, were characterized with X-ray diffraction （XRD）, scanning electron microscopy （SEM） and Hall tester. The results show that, with the annealing temperature elevate, grain size of film increases, resistivity rapidly declines, optical transmittance obviously improve, When annealing temperature is 500℃ ,the minimum resistivity of InSnGaMo multivariate conductive film is 1.46×10^-4Ω·cm, the biggest carrier concentration and mobility are 6.56×10^20cm^-3、65cm^2/（V·s）, respectively, the average optical transmittance is a- bove 92 %. In particularly, when the wavelength is 362nm, the highest optical transmittance can amount to 99 %.

关 键 词：InSnGaMo复合氧化物薄膜 透明导电薄膜 脉冲激光沉积 退火温度 光电性能 

分 类 号：O484.4[理学—固体物理]