砷注入碲镉汞PonN结的电流电压特性  

Current\|voltage characteristics of arsenic\|doped HgCdTe P\|on\|N photodiodes

作　　者：赵军[1] 李向阳[1] 陆慧庆[1] 胡晓宁[1] 李言谨[2] 方家熊[1] 

机构地区：[1]中国科学院传感技术国家重点实验室 [2]1中国科学院传感技术国家重点实验室

出　　处：《红外与激光工程》1999年第6期61-63,共3页Infrared and Laser Engineering

基　　金：国家自然科学基金

摘　　要：最近，选用Ｎ 型体材料碲镉汞（Ｈｇ１－ ｘＣｄｘＴｅ） 作衬底，成功制备了平面ＰｏｎＮ 结构的光电二极管。文中报道了制备各个波段ＰｏｎＮ 结的一些进展。碲镉汞平面ＰｏｎＮ 结采用砷掺杂在Ｎ 型衬底上形成Ｐ区，砷掺杂由砷离子注入加上退火扩散形成。对ＰｏｎＮ 二极管的电流电压关系温度特性的研究表明：直到１４０Ｋ，长波（λｃ ＝ ９ ．１μｍ）ＰｏｎＮ 结的暗电流以扩散电流为主。制备了从中波到长波各个波段的碲镉汞ＰｏｎＮ 结构红外探测器。目前，对于λｃ ＝ ５ ．２μｍ 的器件，Ｒ０ Ａ 值达到６８Ωｃｍ２ ，黑体探测率Ｄ＊ｂｂ（５００Ｋ） 可达２ ×１０１０ｃｍ Ｈｚ１／２／ Ｗ；对于λｃ ＝ １４ ．５μｍ 的器件，Ｒ０ Ａ 值达到０－２Ωｃｍ２ ，黑体探测率Ｄ＊ｂｂ（５００Ｋ） 可达１ ×１０９ｃｍ Ｈｚ１／２／ Ｗ。The planar P\|on\|N Hg\-\{1- x \}Cd\- x Te photodiodes were fabricated sucessfully on N\|type bulk substrates. Some new results of an expanded range of infrared operation are presented in this paper. The P\|on\|N planar devices consist of an arsenic\|doped P\|type layer atop a N\|type bulk substrate. The planar junctions were formed by selective pocket diffusion of arsenic deposited on the surface by ion implantation. Detailed analysis of the current\|voltage characteristics of these diodes (λ\-c=9.1μm) as a function of temperature shows that their dark currents are diffusion\|limited down to 140K. The R \-0 A products of 68Ωcm\+2 were obtained at 80K with cut\|off wavelength of 5.2μm, and its blackbody detectivity D \+*\-\{bb\}(500K) was greater than 2×10\+\{10\}cmHz\+\{1/2\}/W. Here the results of a P\|on\|N photodiode with cut\|off wavelength at VLWIR (14.5μm) were also presented, and its blackbody detectivity D \+*\-\{bb\}(500K) was greater than 1×10\+9cmHz\+\{1/2\}/W.

关 键 词：碲镉汞 光电二极管 砷 注入 电流 电压 P-on-N结 

分 类 号：TN304.26[电子电信—物理电子学] TN364.2