氮氩比对AlN_x薄膜微观结构与光学性质的影响  

EFFECT OF N_2/Ar FLOW RATIO ON MICROSTRUCTURE AND OPTICAL PROPERTIES OF AlN_x FILMS

作　　者：杜淼[1] 郝雷[1] 刘晓鹏[1] 吕芳[1] 米菁[1] 李志念[1] 蒋利军[1] 王树茂[1] 

机构地区：[1]北京有色金属研究总院能源材料与技术研究所,北京100088

出　　处：《太阳能学报》2011年第11期1710-1713,共4页Acta Energiae Solaris Sinica

基　　金：国家自然科学基金(51001017);科技部院所基金(05220902)

摘　　要：利用射频反应磁控溅射技术制备了氮化铝(AlNx)薄膜。采用X射线衍射仪、扫描电子显微镜、紫外-可见-近红外分光光度计分析氮氩比对AlNx相结构、表面形貌、沉积速率以及薄膜光谱透过率的影响规律。氮氩比显著影响溅射薄膜的成分和相组成,进而影响薄膜的透过率。当氮氩比小于4/156时,薄膜由金属铝组成;当氮氩比大于6/154时,薄膜由立方-AlN相组成。薄膜形貌随氮氩比例增大由粗糙不规则状的颗粒转化为均匀致密的细小颗粒,AlNx薄膜的沉积速率随之减小。光学性能测试结果表明,AlNx薄膜透过率由金属铝膜的零增加为83%,AlNx薄膜在300～2500nm波长范围内透过率较高,而在大于2500nm的近红外区透过率显著下降。AlNx films were deposited by RF reactive magnetron sputtering. The effect of N2/Ar flow ratio on microstructure, morphology, deposition rate and optical transmittance of AlNx films had been investigated by X-ray diffraction （XRD）, filed emission scanning electron microscope （FE-SEM） and UV-VIS-NIR spectrometer. When the N2/Ar flow ratio is less than 4/156, AlNx films consist of Al phase. As the AlNx flow ratio reaches to 6/154, AlNx films consist of eubie-AlN phase. With increasing N2/Ar flow ratio, the surface becomes much smoother and denser, the deposition rate decreases and the optical transmission increases from zero to 83 %. The AlNxfilms have higher transmittance in 300 - 2500nm wavelength range than that in over 2500nm wavelength range.

关 键 词：AlNx薄膜 磁控溅射 透过率 

分 类 号：TQ603.1[化学工程]