Valence band structure and density of states effective mass model of biaxial tensile strained silicon based on k·p theory  

作　　者：匡潜玮 刘红侠 王树龙 秦珊珊 王志林 

机构地区：[1]School of Microelectronics,Key Laboratory of Ministry of Education of Wide Band-Gap Semiconductor Technology,Xidian University

出　　处：《Chinese Physics B》2011年第12期335-340,共6页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China (Grant Nos. 60976068 and 60936005);the Cultivation Fund of the Key Scientific and Technical Innovation Project,Ministry of Education of China (Grant No. 78083)

摘　　要：After constructing a stress and strain model, the valence bands of in-plane biaxial tensile strained Si is calculated by k·p method. In the paper we calculate the accurate anisotropy valance bands and the splitting energy between light and heavy hole bands. The results show that the valance bands are highly distorted, and the anisotropy is more obvious. To obtain the density of states （DOS） effective mass, which is a very important parameter for device modeling, a DOS effective mass model of biaxial tensile strained Si is constructed based on the valance band calculation. This model can be directly used in the device model of metal-oxide semiconductor field effect transistor （MOSFET）. It also a provides valuable reference for biaxial tensile strained silicon MOSFET design.After constructing a stress and strain model, the valence bands of in-plane biaxial tensile strained Si is calculated by k·p method. In the paper we calculate the accurate anisotropy valance bands and the splitting energy between light and heavy hole bands. The results show that the valance bands are highly distorted, and the anisotropy is more obvious. To obtain the density of states （DOS） effective mass, which is a very important parameter for device modeling, a DOS effective mass model of biaxial tensile strained Si is constructed based on the valance band calculation. This model can be directly used in the device model of metal-oxide semiconductor field effect transistor （MOSFET）. It also a provides valuable reference for biaxial tensile strained silicon MOSFET design.

关 键 词：biaxial tensile strained Si k · p theory valance band density of state effective mass 

分 类 号：O472.91[理学—半导体物理]