红外焦平面多孔硅绝热层制备及应用  

Fabrication of porous silicon insulation layer with infrared focal plane and its application

作　　者：范茂彦[1,2,3] 姜胜林[1] 张丽芳[3] 

机构地区：[1]华中科技大学电子科学与技术系,湖北武汉430074 [2]昆明物理研究所,云南昆明650223 [3]玉溪师范学院信息技术工程学院,云南玉溪653100

出　　处：《华中科技大学学报（自然科学版）》2011年第11期42-46,共5页Journal of Huazhong University of Science and Technology(Natural Science Edition)

基　　金：国家自然科学基金资助项目(60777043);国家高技术研究发展计划资助项目(2007AA03Z120)

摘　　要：采用电化学法及原电池法制备了多孔硅样品.通过在阳极氧化反应中HF溶液浓度、电流密度和反应时间的不同来控制多孔硅的孔隙率和膜厚.实验结果表明:不同电流密度下制备的多孔硅样品,孔隙度有相同的变化趋势,刚开始增加,然后减少;多孔硅的生长速度随电流密度的增加而升高.在多孔硅样品表面封装BST热释电敏感元件进行性能测试,结果表明多孔硅绝热性能与微桥结构接近.Porous silicon samples were prepared by electrochemical method and primary batteries method,and the porous silicon（PS） pore size,porosity and film thickness were controlled by different HF concentrations,current densities and reaction times in the anodic oxidation reaction.It was found that the porosity values of PS samples prepared by different current density had the same trend that the porosity increased at the beginning and then decreased with etching time.The growth rate of PS is increased with current density.BST pyroelectric sensor was encapsulated on the surface of the porous silicon sample.The sample test results show that the thermal insulation properties of porous silicon is close to micro-bridge.

关 键 词：多孔硅 孔隙率 绝热层 导热系数 电化学腐蚀 

分 类 号：TN405[电子电信—微电子学与固体电子学]