ICP-MS法测定高纯碳化硅粉表面的痕量杂质  

Determination of trace surface impurities of high pure SiC powder by ICP-MS

作　　者：褚连青[1] 刘占勇[1] 王奕[1] 王鑫[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300192

出　　处：《现代仪器》2011年第6期61-62,65,共3页Modern Instruments

摘　　要：本文采用ICP-MS法对高纯碳化硅粉表面的Na、AI、Ti、V、Cr、Mn、Fe、Co、Ni、Cu、Zn、Cd 12种痕量杂质进行测定,用氢氟酸溶液浸提试样表面杂质,用钇做内标补偿基体效应和仪器的漂移,用碰撞反应技术消除多原子离子干扰,通过实验确定最佳优化测定条件。方法检出限为0.005～0.036μg/L;加标回收率为80.0%～120.3%之间;RSD为1.78%～8.95%。方法操作简便、快速、准确。A ICP-MS method was developed for determination of surface impurities of SiC powder.The surface impurities of high pure SiC powder were extraction by the hydrofluoric acid solution.Y was used as an internal standard to compensate for matrix effect and instrument shift.Collision and reaction cells technology was used to eliminate interference.Multi-elements including Na、Al、Ti、V、Cr、Mn、Fe、Co、Ni、Cu、Zn and Cd can be measured simultaneously under the optimum conditions.The detection limits for 12 elements were in the range of 0.005-0.036μg/L,the RSD were less than 1.78%-8.95% and the recoveries were 80.0%-120.3%.The method was easy,rapidly and accuracy.

关 键 词：ICP-MS 高纯碳化硅粉 表面杂质 

分 类 号：TQ223.162[化学工程—有机化工]