肖特基结的制备与势垒测量  

Preparation and measurement of Schottky barrier

作　　者：崔益民[1] 陈彦[1] 裴朝[1] 潘晖[1] 张高龙[1] 钱建强[1] 李华[1] 

机构地区：[1]北京航空航天大学物理教学与实验中心,北京100191

出　　处：《物理实验》2011年第12期27-29,共3页Physics Experimentation

摘　　要：采用磁控溅射方法在Nb0.7%-SrTiO3基片上制作Au薄膜接触,并在氧气气氛下750℃退火30min,在室温环境下测量电流-电压和电容-电压等特性曲线,观测整流特性,根据相应实验数据采用饱和电流法、电容C-2与反偏电压V成线性关系计算肖特基势垒的大小.The Au/Nb0.7%-SrTiO3 barrier was prepared by magnetic controlled sputtering technique and annealing process at 750 ℃ in oxygen for 30 min after the sputtering, the current-voltage characteristic and capacitance-voltage characteristics were measured, the height of the barrier was calculated by the saturation current method and the linear relations between the capacitance C-2 and the partial voltage V.

关 键 词：肖特基势垒 电流-电压特性 电容-电压特性 势垒高度 

分 类 号：O484.42[理学—固体物理]