基于光刻模型的光学邻近校正切分优化方法  

Segmentation Optimization Method for Optical Proximity Correction Based on Lithography Model

作　　者：沈泫[1] 史峥[1] 

机构地区：[1]浙江大学超大规模集成电路设计研究所,杭州310027

出　　处：《计算机工程》2011年第23期211-213,225,共4页Computer Engineering

基　　金："核高基"重大专项(2008ZX01035)

摘　　要：在处理二维图形时需要耗费大量时间调试配方。为此,提出一种基于光刻模型的切分优化方法。采用纹波抑制的切分方法,并根据空间光强曲线的极值点分配切分片段,通过格点搜索选取方法参数,从而获得最优切分方案。实验结果表明,该方法能获得稳定的配方调试时间,且与参考配方结果相比,具有较好的光学邻近校正精度,可使边位置误差平均降低5%。Currently,a great amount of time is spent on tuning recipe when facing complicated 2D patterns.This paper provides a lithography model segmentation optimization method based on a ripple wave suppression algorithm,which allocates fragments according to extrema on aerial intensity curve and then optimizes algorithm parameters by grid point searching to obtain optimal segmentation scheme.Experimental results show that,this method not only provides stable recipe tuning time,but obtains better Optical Proximity Correction（OPC） fidelity with average reduction of 5% in Edge Placement Error（EPE） comparing with the results from a reference recipe.

关 键 词：光学邻近校正 基于模型的切分 纹波抑制 格点搜索 

分 类 号：N945.15[自然科学总论—系统科学]