一种高dB-线性宽动态范围CMOS可变增益放大器  

A High dB-Linear Wide Dynamic Range CMOS Variable Gain Amplifier

作　　者：陈斯[1] 彭艳军[2] 王侠[1] 朱士虎[1] 

机构地区：[1]徐州师范大学物理与电子工程学院,江苏徐州221116 [2]南通大学专用集成电路设计重点实验室,江苏南通226019

出　　处：《微电子学》2011年第6期790-793,798,共5页Microelectronics

基　　金：国家自然科学基金资助项目(61001022)

摘　　要：基于TSMC 0.18μm CMOS工艺,设计了一种高dB-线性宽动态范围的CMOS可变增益放大器。指数电路通过伪Taylor指数函数构造,可变增益单元采用可变跨导、可变负载结构。Hspice仿真结果显示,3-dB带宽为200MHz,在dB-线性内,输出电压的增益动态范围达40dB,误差在±0.5dB之内,电路在3.3V工作电压下总消耗电流为1.6mA。A high dB-linear wide dynamic range CMOS variable gain amplifier was designed based on TSMC＇s 0.18 μm CMOS technology.Exponential circuit was constructed by pseudo Taylor exponential function,and variable transconductance and variable resistor structure were used for gain circuit.Hspice simulation results showed that the circuit had a 3-dB bandwidth of 200 MHz,and an output voltage gain dynamic range up to 40 dB in dB-linear range with an error less than ±0.5 dB.The proposed VGA dissipated 1.6 mA of current from 3.3 V supply.

关 键 词：可变增益放大器 伪Taylor指数函数 dB-线性 可变跨导 

分 类 号：TN432[电子电信—微电子学与固体电子学] TN722