微波混频器高功率微波效应等效电路建立及仿真  

Equivalent circuit establishment and simulation of microwave mixer under high power microwave

作　　者：涂敏[1] 黄文华[1] 李平[1] 

机构地区：[1]西北核技术研究所,西安710024

出　　处：《强激光与粒子束》2011年第11期2845-2849,共5页High Power Laser and Particle Beams

基　　金：国家高技术发展计划项目

摘　　要：利用先进设计系统软件设计并制作了单端混频器电路。开展了高功率微波注入效应实验,获得了一组损伤程度不同的混频器。通过测试二极管的伏-安特性曲线和分析失效机理,用拟合方法建立了损伤二极管的等效电路模型。基于此模型建立了损伤混频器等效电路,并对其被高功率微波损伤前后的输入输出特性进行了仿真计算,其变频损耗与混频器损伤后的实验测试结果相吻合。结果表明:损伤二极管的等效电路模型为在正常二极管结电阻两端并联一损伤等效电阻,其阻值大小反应了混频器的损伤程度,阻值越小,损伤越严重。Single-ended mixers were designed and made with ADS software.A set of mixers of different damage levels were then obtained after effects experiments of microwave injection.By measuring diode volt-ampere characteristics and analyzing failure mechanism,the paper establishes the damaged diode model through fitting.Based on this model,the equivalent circuit of damaged mixer is established.The simulation values of conversion loss are in accordance with the experiment ones.The model places a shunt resistance parallel connected with the junction resistance of normal diode,and the resistance is quite correlated with the damage level of the mixer.The smaller the resistance is,the more serious the damage is.

关 键 词：微波混频器 高功率微波效应 损伤二极管 等效电路模型 电路仿真 

分 类 号：TN773.2[电子电信—电路与系统]