中红外区基质折射率对碳化硅颗粒散射强度的影响  

Influence of mediums′ refractive index on scattering intensity of SiC particle in middle infrared region

作　　者：徐庆君[1] 庄申栋[1] 

机构地区：[1]枣庄学院光电工程学院,山东枣庄277160

出　　处：《激光与红外》2011年第12期1359-1363,共5页Laser & Infrared

基　　金：山东省优秀中青年科学家科研奖励基金项目(No.2008BS01021);枣庄市科技攻关计划项目(No.201031-2);2008年枣庄学院科技计划项目资助

摘　　要：基于Mie散射理论,对不同基质中的碳化硅材料散射强度进行数值计算与理论分析,得到了中红外波段反常色散区和正常色散区中散射强度的分布特征,揭示了入射波长、基质折射率与散射强度分布的内在规律。研究结果为该材料在中红外区的开发和应用提供了理论依据。Based on the Mie scattering theory, the theoretical analysis and numerical calculations of SiC particle＇s light scattering intensity are carried out. we obtained the distribution characteristics of scattering intensity in abnormal dispersion region and abnormal dispersion region of middle infrared band, which reveal the inherent law between incidence wavelength,mediums＇ refractive index and scattering intensity. This research result provides a theoretical basis for the development and application of this material in middle infrared region.

关 键 词：反常色散 正常色散 MIE散射 散射强度 SIC 

分 类 号：O433.4[机械工程—光学工程]