基体负偏压对四面体非晶碳膜结构和性能的影响  

Effect of Substrate Bias on Structure and Properties of Ta-C Films

作　　者：蔡建 杨巍 代伟 柯培玲 汪爱英[1] 

机构地区：[1]中国科学院宁波材料技术与工程研究所表面工程与再制造事业部,浙江宁波315201

出　　处：《中国表面工程》2011年第6期62-67,F0003,共7页China Surface Engineering

基　　金：浙江省自然科学基金(Y4100312)

摘　　要：采用自主研制的45°单弯曲磁过滤阴极电弧沉积系统于Si基体表面制备了四面体非晶碳(ta-C)膜,研究了基体负偏压对薄膜沉积速率、成分、力学性能及摩擦学性能的影响规律。结果表明,随基体负偏压升高,ta-C膜sp3键含量呈先增后减的变化趋势,在-50V时达到最大值(约64%);其硬度和弹性模量呈相似的变化规律,在-50V偏压下获得最大值(48.22GPa和388.52GPa)。ta-C薄膜的摩擦学性能与其sp3碳杂化键的含量密切相关,在-50V偏压下制备的薄膜具有最小平均摩擦因数值(0.10)。可见,采用单弯曲磁过滤阴极弧电弧制备ta-C薄膜的力学和摩擦学特性主要受薄膜中sp3键含量的制约。Tetrahedral amorphous carbon（ta-C） films were prepared to study the deposition rate, composition, mechanical features and tribological properties as a function of substrate bias at a home-made 45°single bent filtered cathodic vac- uum arc deposition system. The results show that the sp3 content in the film first ascends and then descends with the in- creasing of the substrate bias. When the bias is -50 V, the content reaches the highest value of 64%, which leads to the observed maximum hardness and Young＇s modulus at 48.22 GPa and 388.52 GPa, respectively. Furthermore, the mini- mum average coefficient of friction at 0. 1 is also acquired for the ta-C film deposited at -50 V. Therefore the sp3 content dominates the mechanical and tribological properties of deposited films.

关 键 词：单弯曲阴极真空电弧 偏压 四面体非晶碳膜 SP3 

分 类 号：TG174.45[金属学及工艺—金属表面处理]