用于W-LAN的5.8GHz InGaP/GaAs HBT MMIC线性功率放大器(英文)  

5.8 GHz Linear InGaP/GaAs HBT MMIC Power Amplifier for W-LAN Applications

作　　者：张韧[1] 杨洪文[2] 鲍景富[1] 阎跃鹏[2] Zhang Ren;Yang Hongwen;Bao Jingfu;Yan Yuepeng(School of Electronic Engineering,University of Electronic Science and Technology of China,Chengdu 611731,China;Institute of Microelectronics,Chinese Academy of Sciences,Belting 100029,China)

机构地区：[1]电子科技大学电子工程学院,成都611731 [2]中国科学院微电子研究所,北京100029

出　　处：《半导体技术》2012年第1期13-17,28,共6页Semiconductor Technology

基　　金：National Science and Technology Major Projects of China(2009ZX03007-001)

摘　　要：介绍了一种应用于W-LAN系统的5.8 GHz InGaP/GaAs HBT MMIC功率放大器。该功率放大器采用了自适应线性化偏置电路来改善线性度和效率,同时偏置电路中的温度补偿电路可以抑制直流工作点随温度的变化,采用RC稳定网络使放大器在较宽频带内具有绝对稳定性。在单独供电3.6 V电压情况下,功率放大器的增益为26 dB,1 dB压缩点处输出功率为26.4 dBm,功率附加效率(PAE)为25%。三阶交调系数(IMD3)在输出功率为26.4 dBm时为-19 dBc,输出功率为20 dBm时低于-38 dBc,在1 dB压缩点处偏移频率为20 MHz时邻道功率比(ACPR)值为-31 dBc。A W-LAN 5. 8 GHz InGaP/GaAs heterojunction bipolar transistor （HBT） monolithic microwave integrated circuit （MMIC） power amplifier was presented. Linearity and efficiency were improved by using adaptive linear bias circuit and bias compensation circuit could suppress the temperature shift of bias point. RC stability circuit realized the unconditional stability of the amplifier. The amplifier＇s power-added efficiency （PAE） reaches 25%, the output power is 26. 4 dBm at 1 dB compression point and its power gain is more than 26 dB at a single supply voltage of 3. 6 V. The measured third-interinediation distortion （IMD3） is - 19 dBc at output power of 26. 4 dBm and - 38 dBc at output power of 20 dBm respectively, and its adjacent channel power ratio （ACPR） is -31 dBc （20 MHz offset from the center frequency） at 1 dB compression point.

关 键 词：功率放大器 INGAP/GAAS HBT W-LAN 线性化 偏置电路 

分 类 号：TN722.75[电子电信—电路与系统]